TY - JOUR
AU - Li, Qin
AB - A 26∼40 GHz millimeter-wave monolithic passive IQ mixer was designed by using Win’s 0.15-µm GaAs pHEMT process. It utilizes a ring diode structure, and the performance can be improved effectively by a modified Marchand balun and U-type coupled lines. Through on-wafer measurement, the mixer shows a conversion loss of 6.6∼9 dB over a bandwidth of 26∼40 GHz, an IF bandwidth from DC to 6 GHz, an image rejection ratio of 21∼30 dB, an LO-RF isolation of above 24 dB, an LO-IF isolation of above 35 dB, and an RF-IF isolation of above 25 dB.
TI - Design of a Broadband Millimeter-Wave Monolithic IQ Mixer
JF - Journal of Infrared, Millimeter, and Terahertz Waves
DO - 10.1007/s10762-010-9615-2
DA - 2010-02-13
UR - https://www.deepdyve.com/lp/springer-journals/design-of-a-broadband-millimeter-wave-monolithic-iq-mixer-vApAZxi1tw
SP - 593
EP - 600
VL - 31
IS - 5
DP - DeepDyve
ER -