TY - JOUR
AU - Zanaveskin, M. L.
AB - —A unique method for forming gallium nitride–based heterostructures on silicon substrates at low growth temperatures (less than 950°C) is proposed and implemented. The formed heterostructure has an atomically smooth surface with a mean square roughness of 0.45 nm and high crystalline quality. The average layer resistance of the channel of a two-dimensional electron gas was 415 Ω/square at an electron concentration of 1.65 × 1013 cm–2 and mobility 920 cm2/(V s). The maximum value of the drain saturation current for transistors with a gate width of 1.2 mm was 930 mA/mm, which corresponds to the best results worldwide for gallium nitride transistors on silicon substrates.
TI - Gallium Nitride–Based Heterostructures on Silicon Substrates for Powerful Microwave Transistors
JO - Nanotechnologies in Russia
DO - 10.1134/S1995078019040050
DA - 2019-07-13
UR - https://www.deepdyve.com/lp/springer-journals/gallium-nitride-based-heterostructures-on-silicon-substrates-for-uj07MBMf1e
SP - 385
EP - 388
VL - 14
IS - 7-8
DP - DeepDyve
ER -