TY - JOUR
AU - Qiu, Anqi
AB - IntroductionFor many years, the semiconductor industry has improved the performance of microelectronic devices and their functionality. This was achieved through the maximization of the transistor density and the continuous scaling of integrated circuits. This encouraged the introduction of new materials, chip designs, processes, and packaging strategies into the final products. Among these, innovations are insulating materials with a dielectric constant (k) less than that of SiO2, so called low‐k dielectrics. A typical way to decrease the k‐value is by increasing the film porosity. However, the introduction of porosity comes at the cost of reduced mechanical properties, which can drastically affect the reliability of the integrated circuits Therefore, thorough understanding and exploration of the mechanical properties of the low‐k materials are necessary to evaluate their suitability for the future technology nodes. Nanoindentation is commonly used in the semiconductor industry to evaluate the mechanical properties of materials due to its accuracy, wide range of capabilities to assess different aspects of material behavior and straightforward data analysis procedure on bulk materials. In the case of low‐k materials, however, the porous structure and reduced film thicknesses obscure the accurate interpretation of experimental data. Stress fields progressing beneath the indenter probe during indentation loading 
TI - Substrate Independent Elastic Modulus of Thin Low Dielectric Constant Materials
JF - Advanced Engineering Materials
DO - 10.1002/adem.201600653
DA - 2017-08-01
UR - https://www.deepdyve.com/lp/wiley/substrate-independent-elastic-modulus-of-thin-low-dielectric-constant-sj23d04RE9
SP - n/a
EP - n/a
VL - 19
IS - 8
DP - DeepDyve
ER -