TY - JOUR
AU1 - Ma, Quan-Bao
AU2 - Ye, Zhi-Zhen
AU3 - He, Hai-Ping
AU4 - Zhu, Li-Ping
AU5 - Liu, Wei-Chang
AU6 - Yang, Ye-Feng
AU7 - Gong, Li
AU8 - Huang, Jing-Yun
AU9 - Zhang, Yin-Zhu
AU1 - Zhao, Bing-Hui
AB - Highly near-infrared (IR) reflecting and transparent conducting Ga-doped ZnO films were deposited on a glass substrate by dc reactive magnetron sputtering. The influence of substrate temperature on the structural, electrical and optical properties of the films was investigated. A lowest resistivity of 3.0 × 104cm was obtained at the substrate temperature of 300°C. The average transmittance of the films is over 90% in the visible range. The IR transmission cut-off wavelength of the films shifts towards the lower wavelength with increasing electron concentration. All the films have low transmittance and high reflectance in the near-IR region. The IR reflectance of the films shows an increase with increasing electron concentration.
TI - Highly near-infrared reflecting and transparent conducting ZnO:Ga films: substrate temperature effect
JF - Journal of Physics D: Applied Physics
DO - 10.1088/0022-3727/41/5/055302
DA - 2008-03-07
UR - https://www.deepdyve.com/lp/iop-publishing/highly-near-infrared-reflecting-and-transparent-conducting-zno-ga-sFTQHvQk66
SP - 055302
VL - 41
IS - 5
DP - DeepDyve
ER -