TY - JOUR
AU - Lee, Seunghyun
AB - Abstract A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor (i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene’s stability. A transistor current gain (β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.
TI - A transistor based on 2D material and silicon junction
JF - "Journal of the Korean Physical Society"
DO - 10.3938/jkps.71.92
DA - 2017-07-01
UR - https://www.deepdyve.com/lp/springer-journals/a-transistor-based-on-2d-material-and-silicon-junction-rpxZiUyJQU
SP - 92
EP - 100
VL - 71
IS - 2
DP - DeepDyve
ER -