TY - JOUR
AU1 - Guo, Xiao‐Hui
AU2 - Zhang, Jia
AU3 - Yao, Kai‐Lun
AU4 - Zhu, Lin
AB - The development of next‐generation spin nanomemory systems faces the challenge of achieving nonvolatile electrical control of magnetic states in magnetic tunnel junctions. Here, a strategy is proposed using trilayer van der Waals heterostructures combining an A‐type antiferromagnetic YBr2 bilayer and a ferroelectric Al2Se3 monolayer. Nonvolatile modulation of the ferroelectric polarization direction of Al2Se3 can flip the interlayer magnetic coupling of YBr2 between ferromagnetic and antiferromagnetic states. The interlayer magnetic phase transition is caused by the band structure shift and interfacial charge transfer induced by the polarization field. The TiTe2/2L‐YBr2/Al2Se3/TiTe2 multiferroic devices achieve a fully electrically controlled tunneling magnetoresistance with a ratio of up to 11550% and an exceptionally low resistance‐area product of 0.28 Ω µm2 by establishing a good P‐type Ohmic contact between the TiTe2 electrode and the central heterojunction. There is also a perfect spin filtering effect. This work provides new perspectives for the development of low‐power, fast‐response, nonvolatile and fully electrically controlled spintronic memory devices.
TI - Fully Electrically Controlled Low Resistance‐Area Product and Enhanced Tunneling Magnetoresistance in the Van Der Waals Multiferroic Tunnel Junction
JF - Advanced Functional Materials
DO - 10.1002/adfm.202423855
DA - 2025-03-30
UR - https://www.deepdyve.com/lp/wiley/fully-electrically-controlled-low-resistance-area-product-and-enhanced-reRgYEM5k0
VL - Early View
IS - 
DP - DeepDyve
ER -