TY - JOUR
AU - Farries, Mark C.
AB - Recent advances in semiconductor laser technology, which have led to compact sources potentially suitable for lidar, are described. Quantum well technology has enabled InGaAs laser arrays to provide powers of 800 mW in the 900 - 1000 nm wavelength region while InGaAsP lasers provide peak powers of 1.4 W at the eye safe wavelength of 1.55 micrometers . A distributed feedback structure has been used to simultaneously produce a mean power of 100 mW and a linewidth of 800 kHz which may be used for coherent lidar (e.g., FM cw).
TI - High-power semiconductor lasers for lidar and sensing applications
JF - Proceedings of SPIE
DO - 10.1117/12.168078
DA - 1993-02-01
UR - https://www.deepdyve.com/lp/spie/high-power-semiconductor-lasers-for-lidar-and-sensing-applications-r4CHHqnpix
SP - 55
EP - 58
VL - 2088
IS - 1
DP - DeepDyve
ER -