TY - JOUR
AU - Rapakoulias, D E
AB - A two dimensional (2D), time dependent fluid model was used to study the deposition of c-Si from low-pressure, capacitively coupled radio-frequency (RF), silanehydrogen discharges. The model was applied for the simulation of a parallel plate, capacitively coupled plasma chamber, operating at frequency 27.12 MHz and conditions of low pressure, dust free regime. Qualitatively good agreement between the model and the experimental results was found for the electrical and chemical characteristics of the discharge. This agreement, allowed us to discuss the main effects of the discharge power on the species production and fluxes towards the substrate and to identify the most important parameters for microcrystal formation and the achievement of rather fast deposition rate.
TI - Power consumption effect on the microcrystalline silicon deposition process: a comparison between model and experimental results
JO - Journal of Physics: Conference Series
DO - 10.1088/1742-6596/10/1/049
DA - 2005-01-01
UR - https://www.deepdyve.com/lp/iop-publishing/power-consumption-effect-on-the-microcrystalline-silicon-deposition-r38thlDZAt
SP - 198
VL - 10
IS - 1
DP - DeepDyve
ER -