TY - JOUR
AU - Shimada, M.
AB - JOURNAL OF MATERIALS SCIENCE LETTERS 11 (1992) 567-569 T. ENDO, Y. SATO, H. TAKIZAWA, M. SHIMADA Department of Molecular Chemistry and Engineering, Faculty of Engineering, Tohoku University, Aoba-ku, Sendal City, Miyagi 980, Japan Most AnBIvCv compounds crystallize in the chalco- samples was controlled by the supplied electric pyrite structure, which has a sufficient potentiality to power through the carbon heater, and was calibrated give a larger variety of applications than the AraB v by inserting a Pt/Pt-13% Rh thermocouple in the compounds do [1]. A series of studies on the cell assembly. The e.m.f, was not corrected for AnBIvC v chalcopyrites with diverse optical, elec- pressure effects. trical and structural properties, etc., has been The crystallographic analysis for high-pressure reviewed by Goryunova [2]. The AnBIvCV com- products was carried out by means of X-ray powder pounds are considered to be derived from III-V diffraction with monochromatic CuK~ radiation. zincblende-type compounds by replacing a pair of The scanning rate of 0.5 ° min -1 was chosen and SiO2 group nI atoms by one from each of groups II and (quartz) was used as a internal standard material to IV. The atomic position co-ordinates in chalcopyrite evaluate precisely the lattice parameters. 
TI - High-pressure synthesis of ZnSiP 2 and ZnGeP 2
JF - Journal of Materials Science Letters
DO - 10.1007/BF00728610
DA - 1992-01-01
UR - https://www.deepdyve.com/lp/springer-journals/high-pressure-synthesis-of-znsip-2-and-zngep-2-q0Cqczpy5O
SP - 567
EP - 569
VL - 11
IS - 9
DP - DeepDyve
ER -