TY - JOUR
AU - Castel, Egil D.
AB - Abstract Materials traditionally used in integrated circuits have limitations as those circuits reach submicron design rules. Refractory metals have found their place in very-large-scale-integration device technologies, and an experimental program involving the use of tungsten as a gate material has been undertaken, with special emphasis on purity requirements. Bias temperature stress capacitance-voltage measurements show that very low levels of mobile ion contamination can be obtained in metal oxide semiconductor capacitors with tungsten gates sputtered from a special high-purity target.
TI - Refractory metals in submicron IC architecture
JF - JOM
DO - 10.1007/BF03220245
DA - 1989-06-01
UR - https://www.deepdyve.com/lp/springer-journals/refractory-metals-in-submicron-ic-architecture-pvEoYIx2Op
SP - 23
EP - 26
VL - 41
IS - 6
DP - DeepDyve
ER -