TY - JOUR
AU1 - Yang, Song
AU2 - Zhuang, Xuxia
AU3 - Xue, Fang
AU4 - Sun, Qian
AU5 - Ruan, Ningjuan
AB - Due to its advantages on the cost, power and size, the study of the CMOS image sensor is considered as an important direction of the development of low-light-level image sensor. However, the sensitivity of current CMOS image sensor does not satisfy the low-light-level application requirements. This paper introduces several key techniques on how to improve the sensitivity of CMOS image sensors. We introduce a novel CMOS low-light-level image sensor based on Geiger mode avalanche photodiode (GM-APD) and digital TDI technology. Noise characteristics and complete signal-tonoise ratio(SNR) theoretical models are constructed for both sensors. A comparison of SNR performance of two image sensors is also done by numerical simulation in this paper. The results show that the novel CMOS low-light-level image sensor outperforms EMCCD at the very low light level.
TI - Imaging performance comparison of novel CMOS low-light-level image sensor and electron multiplying CCD sensor
JF - Proceedings of SPIE
DO - 10.1117/12.2285297
DA - 2017-10-24
UR - https://www.deepdyve.com/lp/spie/imaging-performance-comparison-of-novel-cmos-low-light-level-image-pYl4rd2gnu
SP - 104623X
EP - 104623X-6
VL - 10462
IS - 
DP - DeepDyve
ER -