TY - JOUR
AU - Dang, Cu. X.
AB - Silicon dioxide, SiO 2 , is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO 2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO 2 film with good and stable property.
TI - Ion assisted deposition of SiO 2 film from silicon
JF - Proceedings of SPIE
DO - 10.1117/12.625021
DA - 2005-09-30
UR - https://www.deepdyve.com/lp/spie/ion-assisted-deposition-of-sio-2-film-from-silicon-onh0wfSpPn
SP - 59631U
EP - 59631U-4
VL - 5963
IS - 1
DP - DeepDyve
ER -