TY - JOUR
AU - Kulkarni, S K
AB - Chemically capped CdS nanoparticles are embedded inporous silicon (PS) by a dip coating method. Atomic force microscopymeasurements reveal that the PS surface is covered withCdS nanoparticles forming well-defined rectangular blocks ofnearly uniform size (200×200nm2). Photoelectronspectroscopy and energy dispersive x-ray analysis confirm thepresence of CdS in PS. Optical and electricalproperties of the heterojunctions so-formed are investigated.Junction characteristics show that the composite so-formedexhibits very high forward current density (145mAcm-2)and high reverse breakdown voltage (15V).
TI - Photoluminescence and I-V characteristics of a CdS-nanoparticles-porous-silicon heterojunction
JO - Nanotechnology
DO - 10.1088/0957-4484/12/3/316
DA - 2001-08-23
UR - https://www.deepdyve.com/lp/iop-publishing/photoluminescence-and-i-v-characteristics-of-a-cds-nanoparticles-oCODlFVAzQ
SP - 290
EP - 294
VL - 12
IS - 3
DP - DeepDyve
ER -