TY - JOUR
AU1 - Mao, Yuqing
AU2 - Charlon, Yoann
AU3 - Leduc, Yves
AU4 - Jacquemod, Gilles
AB - In this paper, a low-power Injection-Locked Clock and Data Recovery (ILCDR) using a 28 nm Ultra-Thin Body and Box-Fully Depleted Silicon On Insulator (UTBB-FDSOI) technology is presented. The back-gate auto-biasing of UTBB-FDSOI transistors enables the creation of a Quadrature Ring Oscillator (QRO) reducing both size and power consumption compared to an LC tank oscillator. By injecting a digital signal into this circuit, we realize an Injection-Locked Oscillator (ILO) with low jitter. Thanks to the good performance of this oscillator, we propose a low-power ILCDR with fast locking time and low jitter for burst-mode applications. The main novelty consists of the implementation of a complementary QRO based on back-gate control using FDSOI technology to realize a simple and efficient ILCDR circuit. With a Pseudo-Random Binary Sequence (PRBS7) at 868 Mbps, the recovered clock jitter is 26.7 ps (2.3% UIp-p) and the recovered data jitter is 11.9 ps (1% UIp-p). With a 0.6 V power supply, the power consumption is 318μW. All the results presented here are based on post-layout simulations, as no prototypes have been produced. Similarly, we can estimate the surface area of the chip (without the pad ring) at around 6600 μm2.
TI - A Low Power Injection-Locked CDR Using 28 nm FDSOI Technology for Burst-Mode Applications
JF - Journal of Low Power Electronics and Applications
DO - 10.3390/jlpea14020022
DA - 2024-04-07
UR - https://www.deepdyve.com/lp/multidisciplinary-digital-publishing-institute/a-low-power-injection-locked-cdr-using-28-nm-fdsoi-technology-for-nsW5svCpCt
SP - 22
VL - 14
IS - 2
DP - DeepDyve
ER -