TY - JOUR
AU1 - Lee, Yong-Bok
AU2 - Kang, Min-Ho
AU3 - Choi, Pan-Kyu
AU4 - Kim, Su-Hyun
AU5 - Kim, Tae-Soo
AU6 - Lee, So-Young
AU7 - Yoon, Jun-Bo
AB - With the exponential growth of the semiconductor industry, radiation-hardness has become an indispensable property of memory devices. However, implementation of radiation-hardened semiconductor memory devices inevitably requires various radiation-hardening technologies from the layout level to the system level, and such technologies incur a significant energy overhead. Thus, there is a growing demand for emerging memory devices that are energy-efficient and intrinsically radiation-hard. Here, we report a nanoelectromechanical non-volatile memory (NEM-NVM) with an ultra-low energy consumption and radiation-hardness. To achieve an ultra-low operating energy of less than 10 fJ bit−1\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$${{{{{{\rm{fJ\; bit}}}}}}}^{-1}$$\end{document}, we introduce an out-of-plane electrode configuration and electrothermal erase operation. These approaches enable the NEM-NVM to be programmed with an ultra-low energy of 2.83 fJ bit−1\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$${{{{{{\rm{fJ\; bit}}}}}}}^{-1}$$\end{document}. Furthermore, due to its mechanically operating mechanisms and radiation-robust structural material, the NEM-NVM retains its superb characteristics without radiation-induced degradation such as increased leakage current, threshold voltage shift, and unintended bit-flip even after 1 Mrad irradiation.
TI - Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory
JF - Nature Communications
DO - 10.1038/s41467-023-36076-0
DA - 2023-01-28
UR - https://www.deepdyve.com/lp/springer-journals/sub-10-fj-bit-radiation-hard-nanoelectromechanical-non-volatile-memory-nqRKzNMak3
VL - 14
IS - 1
DP - DeepDyve
ER -