TY - JOUR
AU - Kauppinen, Esko I
AB - We demonstrate a fabrication method for high-performance field-effect transistors(FETs) based on dry-processed random single-walled carbon nanotube networks(CNTNs) deposited at room temperature. This method is an advantageous alternativeto solution-processed and direct CVD grown CNTN FETs, which allows usingvarious substrate materials, including heat-intolerant plastic substrates, and enablesan efficient, density-controlled, scalable deposition of as-produced single-walledCNTNs on the substrate directly from the aerosol (floating catalyst) synthesisreactor. Two types of thin film transistor (TFT) structures were fabricated toevaluate the FET performance of dry-processed CNTNs: bottom-gate transistors onSi/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to105 and field-effectmobilities up to 4 cm2 V1 s1. The suppression of hysteresis in the bottom-gate device transfer characteristics by meansof thermal treatment in vacuum and passivation by an atomic layer depositedAl2O3 film was investigated.A 32 nm thick Al2O3 layer was found to be able to eliminate the hysteresis. 
TI - Carbon nanotube thin film transistors based on aerosol methods
JO - Nanotechnology
DO - 10.1088/0957-4484/20/8/085201
DA - 2009-02-25
UR - https://www.deepdyve.com/lp/iop-publishing/carbon-nanotube-thin-film-transistors-based-on-aerosol-methods-ninLxnu51L
SP - 085201
VL - 20
IS - 8
DP - DeepDyve
ER -