TY - JOUR
AU - Anderle,  M.
AB - 216 341 341 1 2 L. Moro P. Lazzeri G. Ottaviani L. Bacci G. Queirolo M. Anderle IRST — Divisione di Scienza dei Materiali I-38050 Povo, Trento Italy Dipartimento di Fisica Università di Modena I-41100 Modena Italy SGS — Thomson Microelectronics I-20041 Agrate, Milano Italy Summary Polycide gate structures are widely used in ULSI (Ultra Large Scale Integration) devices. The distribution of the dopant between the various layers is of major concern. The effects of the fluorine incorporated during WSi 2 deposition have been discussed because fluorine may diffuse into the gate oxide. We have studied the redistribution of boron, phosphorus and fluorine in WSi 2 /poly/SiO 2 /poly/SiO 2 /Si (bulk) gate structures by using hot e-gas SNMS and nuclear analyses (RBS/NRA), in samples subjected to thermal treatments that simulate the different steps of the ULSI fabrication sequence.
TI - SNMS studies of ULSI gate interconnection structures
JF - Analytical and Bioanalytical Chemistry
DO - 10.1007/BF00322100
DA - 1991-01-01
UR - https://www.deepdyve.com/lp/springer-journals/snms-studies-of-ulsi-gate-interconnection-structures-n2SBMKnVJq
SP - 20
EP - 24
VL - 341
IS - 1
DP - DeepDyve
ER -