TY - JOUR
AU1 - Steinberg, J.I.
AU2 - Horowitz, S.J.
AU3 - Bacher, R.J.
AB - Modern complex integrated circuits require more inputoutput connections and operate at faster switching speeds and higher power levels than was the case before LSI and VLSI devices. As a result, there is a need for packages with high electrical conductivity, low dielectric constant, high thermal conductivity, precise line resolution and low unit cost. Ideally, it should also be possible to include resistors and for the package to be manufactured inhouse for maximum control. Multilayer printed circuit boards, complex multilayer hybrid circuits and high temperature cofired ceramic packages have been used to accomplish the interconnection of complex ICs. A new technology has been developed which combines the benefits of thick film with the processing advantages of cofired ceramic. The thick film process begins with a bare substrate, usually 96 alumina, upon which gold, silver alloy or copper metallisation, and screenprintable dielectric paste are applied. Processing is a series of printing and firing operations the firing temperature is usually between 800C and 1000C. Interconnecting vias are typically formed by screen printing and are usually a minimum of 250 m 10 mil in diameter. The high temperature cofired approach uses no substrate. Printing of tungsten, molybdenum or molymanganese metallisation is carried out on alumina tape dielectric. The vias are formed by mechanical punching and are typically a minimum of 200 m 8 mil in diameter. A single firing is performed in a special atmosphere, usually at 1500C. This paper describes a new materials system which consists of a tape dielectric and gold, silver and silverpalladium inner layer and via fill conductor compositions. Circuits and packages made with the system are fired in an air atmosphere in standard thick film furnaces and are compatible with other conventional thick film materials. The process for making these parts is described and critical process parameters are identified. The results of reliability testing under temperature, humidity and bias are discussed and supporting microstructural analysis is presented.
TI - Low Temperature Cofired Tape Dielectric Materials System for Multilayer Interconnections
JF - Microelectronics International
DO - 10.1108/eb044213
DA - 1986-01-01
UR - https://www.deepdyve.com/lp/emerald-publishing/low-temperature-cofired-tape-dielectric-materials-system-for-m7rWd0UiCz
SP - 36
EP - 39
VL - 3
IS - 1
DP - DeepDyve
ER -