TY - JOUR
AU - Yang, Shu-Ying
AB - Due to its superior photosensitivity in visible light, amorphous selenium-based photoreceptors are widely used on photoreceptor drums in copying machines. Hydrogenated amorphous silicon (a-Si:H), which has special homogeniety making it easily deposited on the substrate as well as excellent photosensitivity in visible light, is first applied as a blocking layer on photoreceptors. Because intrinsic a-Si:H film is an n-type semiconductor, this configuration generates Schottky contact and an np junction at the interfaces which could be regarded as an ideal photodiode. Therefore, we attempted to adopt a-Si:H thin film as a blocking layer, and combine it with amorphous arsenic selenide (a-As2Se3) to prepare two structures of Al/Al2O3/a-As2Se3 and Al/a-Si:H/a-As2Se3 photoreceptors. Using an electrostatic paper analyzer (model: EPA-8100) to measure the photoinduced discharge curve (PIDC), we discovered that the Al/a-Si:H/a-As2Se3 structure has a high initial surface potential (Vso∼214 V; 41.63 V/µm), excellent photosensitivity (E1/2∼2.19 lx·s), a low residual potential (Vr∼4 V), and a high contrast voltage ratio (214 V/4 V\cong53.5). For a better understanding of photoreceptors, we investigated the photosensitivity at different incident wavelengths, the movement of carriers in the photoreceptors and the characteristics of photoreceptors during isothermal annealing. 
TI - Study on the Optoelectronic Properties of Al/a-Si:H/a-As2Se3 Photoreceptor for Electrophotography
JF - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.39.5128
DA - 2000-09-01
UR - https://www.deepdyve.com/lp/iop-publishing/study-on-the-optoelectronic-properties-of-al-a-si-h-a-as2se3-lldw0PuccE
SP - 5128
VL - 39
IS - 9R
DP - DeepDyve
ER -