TY - JOUR
AU - Noh, Tae Won
AB - A TiO2/VO2 oxide double‐layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.
TI - Oxide Double‐Layer Nanocrossbar for Ultrahigh‐Density Bipolar Resistive Memory
JF - Advanced Materials
DO - 10.1002/adma.201102395
DA - 2011-09-15
UR - https://www.deepdyve.com/lp/wiley/oxide-double-layer-nanocrossbar-for-ultrahigh-density-bipolar-kofZ8wm4AX
SP - 4063
EP - 4067
VL - 23
IS - 35
DP - DeepDyve
ER -