TY - JOUR
AU - Xiao, Di
AB - Abstract: We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley Hall conductivity in the band transport regime, which originates from an enhanced side jump of a Dirac electron when it scatters off the gauge potential. By assuming a small residue charge density our theory reproduces qualitatively the temperature- and gap-dependence of the observed valley Hall effect at the charge neutral point. Our study suggests that the valley Hall effect in graphene systems represents a new paradigm for the anomalous Hall physics where gauge disorder plays an important role.
TI - Strain-Fluctuation-Induced Near-Quantization of Valley Hall Conductivity in Graphene Systems
JF - Condensed Matter
DO - 10.1103/PhysRevB.99.205416
DA - 2019-05-15
UR - https://www.deepdyve.com/lp/arxiv-cornell-university/strain-fluctuation-induced-near-quantization-of-valley-hall-kVi0fNfzPN
VL - 2019
IS - 1905
DP - DeepDyve
ER -