TY - JOUR
AU - Liu, H. H.
AB - The silicon nitride spacer technology is widely used in split gate non-volatile memory device sand flash EPROM. A tiny spacer structure is formed on tunnel oxide layer adjacent to the sidewall of floating gate electrode to prevent write disturbance that caused by reverse tunneling. But the processing is very critical for such flash EPROM devices since the dimension the SN spacer are so small. It was influenced not only by SN spacer dry etching but also later photo-resistance strip process of implantation for threshold voltage adjustment. A new method of forming tiny SN spacer by using anisotropic dry etching and isotropic wet etching was presented in this paper.
TI - Method of forming tiny silicon nitride spacer for flash EPROM
JF - Proceedings of SPIE
DO - 10.1117/12.425240
DA - 2001-04-20
UR - https://www.deepdyve.com/lp/spie/method-of-forming-tiny-silicon-nitride-spacer-for-flash-eprom-kEcaFZ2up0
SP - 73
EP - 76
VL - 4405
IS - 1
DP - DeepDyve
ER -