TY - JOUR
AU - Jeong, Jae Kyeong
AB - Novel ZrInZnO semiconductor materials to resolve transistor instability for active‐matrix organic light‐emitting diodes are proposed. The ZrInZnO film is preprared using a cosputtering method, and presents a nanocrystal structure embedded in an amorphous matrix. The thin‐film transistors fabricated have good electrical performances as well as excellent stability under long‐term bias stresses.
TI - Novel ZrInZnO Thin‐film Transistor with Excellent Stability
JF - Advanced Materials
DO - 10.1002/adma.200802246
DA - 2009-01-19
UR - https://www.deepdyve.com/lp/wiley/novel-zrinzno-thin-film-transistor-with-excellent-stability-k8kJLa0km5
SP - 329
EP - 333
VL - 21
IS - 3
DP - DeepDyve
ER -