TY - JOUR
AU - Chen, Jerry X.
AB - Haze and other progressive reticle defects have been known in the semiconductor industry for more than a decade 1. Extensive research and experiments have been carried out to determine the sources and origins of the progressive haze growth, but the true mechanisms of its cause are still under speculation. To minimize the wafer yield loss at Samsung Austin Semiconductor (SAS), we introduced a practical method to control the haze defects in a DRAM manufacturing environment that integrates reticle and wafer inspections, reticle cleaning, and a dose-based and time-based control forecast software system. This development has been proven to be very effective in controlling the haze defects and reducing the related yield loss while still supporting high volume wafer production.
TI - Haze defect control and containment in a high-volume DRAM manufacturing environment
JF - Proceedings of SPIE
DO - 10.1117/12.632188
DA - 2005-10-21
UR - https://www.deepdyve.com/lp/spie/haze-defect-control-and-containment-in-a-high-volume-dram-k09PMjqi0N
SP - 59923I
EP - 59923I-11
VL - 5992
IS - 1
DP - DeepDyve
ER -