TY - JOUR
AU - Sakai, Y.
AB -  H . T E R A O (Associate), T . I T 0 andY. S A K A I (Members) Department of Electronics Faculty of Engineering, Tokyo Institute of Technology 1. Introduction Research has been active on the metal-insulator-semiconductor (MIS) structure which is applied extensively to the semiconductor surface stabilization, planar technology, MIS-type field effect transistors etc. However, it is very difficult to form an electrically stable insulating film on the surface of composite semiconductors such as GaAs, InAs, etc. the film must be formed at low temperature. We have attempted t o form A1203 films by the gas growth method, A1203 and S i m films by the H F sputtering method, and In203 films by use of 0.1 N-KOH electrolyte. Among these a m s , A1203 films produced by the gas growth method exhibit the most ideal characteristics. Formation of A1203 film by the gas growth method Figure 1 shows the chemical vapor deposition apparatus. The source (aluminum isopropoxide AL(OC$7)3) is heated at 125°C. A mixture of the source vapor and carrier gas (nitrogen o r argon) is sent to a reaction tube where A12(OC3H7)3is decomposed thermally and A1203 is deposited on the I d 
TI - Interface properties of InAs‐MIS structures and their application to FET
JF - Electrical Engineering in Japan
DO - 10.1002/eej.4390940217
DA - 1974-01-01
UR - https://www.deepdyve.com/lp/wiley/interface-properties-of-inas-mis-structures-and-their-application-to-jorjgRUwbV
SP - 127
EP - 132
VL - 94
IS - 2
DP - DeepDyve
ER -