TY - JOUR
AU - Nicolosi, P.
AB - Thin films of silicon carbide (SiC) have been prepared by means of pulsed laser deposition (PLD) on sapphire (Al2O3) and Si(100) substrates with a Nd-YAG laser 1064 nm. We achieved the growth of cubic silicon carbide (3C-SiC) films at the temperatures of 650°C from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The use of off-axis PLD method placing the sample at 90° with respect to the target leads to a good quality smooth film.
TI - Synthesis of heteroepytaxial 3C-SiC by means of PLD
JF - Applied Physics A: Materials Science  Processing
DO - 10.1007/s00339-011-6494-x
DA - 2011-06-15
UR - https://www.deepdyve.com/lp/springer-journals/synthesis-of-heteroepytaxial-3c-sic-by-means-of-pld-jaqqdNmvOm
SP - 225
EP - 231
VL - 105
IS - 1
DP - DeepDyve
ER -