TY - JOUR
AU - Masakiyo Matsumura 
    , Masakiyo Matsumura
AB - Single-crystal silicon thin-film transistors (TFTs) were    fabricated within an    ultra-large grain thin film on a glassy substrate which was    formed by an excimer-laser    crystallization method.    The field-effect mobility of the TFTs    was 460 cm2/Vs for electrons.    The off-current was less than    3 ×10-13 A/µm per unit    channel width for a wide range of gate voltages.     
TI - Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors
JF - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.36.6167
DA - 1997-10-01
UR - https://www.deepdyve.com/lp/iop-publishing/excimer-laser-produced-single-crystal-silicon-thin-film-transistors-jNxe4HMeg6
SP - 6167
VL - 36
IS - 10R
DP - DeepDyve
ER -