TY - JOUR
AU - Cai, G.
AB - Device scaling in silicon MOSFET (metal–oxide–semiconductor field-effect transistor) processes continues to drive demand for ultra-shallow junctions. Device manufacturers must simultaneously achieve shallow, well-controlled junction depth while increasing the implanted dose to maintain the desired resistance. As the dose increases at low energy the implanted dose near the projected range (Rp) can significantly exceed the activated dose after annealing. In some advanced logic applications device manufacturers are partitioning a single energy implant step into multiple implants with a range of energies with the intent of retaining the required junction depth (Xj) and forming a more box-like profile with a lower peak as-implanted dopant concentration. We studied a range of damage engineering knobs to provide control over the damage engineering characteristics of each individual implant. We also studied the impact of controlling order of implants and the queue time between implant steps within a multi-energy implant sequence and their impact to the final damage and concentration profile results. To study this behavior, we invented a method allowing rapid switching between implants of the same species at different energies at a controlled time on the order of seconds to implant entire multi-energy sequences without removing the substrate from the platen. This study reveals that both selection of sequence order and control of the queue time between implant steps influences the results of the entire process with implant order being the stronger effect.Graphical abstract[graphic not available: see fulltext]
TI - Single implant damage accumulation and interactions between multiple implants
JO - MRS Advances
DO - 10.1557/s43580-022-00418-9
DA - 2022-12-05
UR - https://www.deepdyve.com/lp/springer-journals/single-implant-damage-accumulation-and-interactions-between-multiple-ihNUSjAMVf
SP - 1
EP - 6
VL - OnlineFirst
IS - 
DP - DeepDyve
ER -