TY - JOUR
AU - Yamazaki, Shunpei
AB - We investigated In‐Ga‐Zn oxide films deposited by two types of sputtering methods: planar magnetron and facing‐target. In crystallinity, we found that silicon diffused from SiOx prevents crystallization regardless of the sputtering method. In electrical property, we found that mobility of films deposited by facing‐target sputtering less depends on carrier concentration.
TI - P‐52: Morphological and Electrical Difference in C‐axis Aligned Crystalline IGZO Films Based on the Sputtering Method
JF - Sid Symposium Digest of Technical Papers
DO - 10.1002/sdtp.10926
DA - 2016-05-01
UR - https://www.deepdyve.com/lp/wiley/p-52-morphological-and-electrical-difference-in-c-axis-aligned-if0coofmLt
SP - 1330
EP - 1332
VL - 47
IS - 1
DP - DeepDyve
ER -