TY - JOUR
AU1 - Wu, Chufan
AU2 - 
AB - Proceedings of the 3rd International Conference on Materials Chemistry and Environmental Engineering DOI: 10.54254/2755-2721/7/20230310 Research on reliability of complementary metal oxide semiconductor integrated circuit Chufan Wu Wuhan University,Luojiashan street,Wuhan,Hubei ,430000,China 120965391@qq.com Abstract. Complementary metal oxide semiconductor (CMOS) devices are an important part of integrated circuit (IC), but in the application process, it has many reliability problems, such as negative-bias temperature instability (NBTI), electromigration (EM), time-dependent gate oxide breakdown (TDDB), hot carrier injection (HCI), etc. These reliability problems can affect the threshold voltage and mobility of the device. In order to improve the reliability of integrated circuits, these reliability problems are systematically studied in this paper. Keywords: NMOS, PMOS, NBTI, EM, TDDB, HCI. 1. Introduction An integrated circuit (IC) is an electronic circuit that integrates many microelectronic elements, including transistors, diodes, capacitors, resistors, inductors, etc. using a specific process. Compared with traditional electronic components, ICs have the advantages of high integration and smaller size. As early as around 1952, Geoff Dummer put forward the idea of concentrating independent electronic components on semiconductor chips, and proposed a specific circuit design scheme [1]. In 1958, Jack Kilby successfully integrated multiple germanium devices on a single wafer [2]. This is the first IC 
TI - Research on reliability of complementary metal oxide semiconductor integrated circuit
JF - Applied and Computational Engineering
DO - 10.54254/2755-2721/7/20230310
DA - 2023-07-21
UR - https://www.deepdyve.com/lp/unpaywall/research-on-reliability-of-complementary-metal-oxide-semiconductor-iWYrbZabUM
DP - DeepDyve
ER -