TY - JOUR
AU - Grapov, D. V.
AB - The processes of electrochemical deposition into a matrix of vertical vias of different diameters (500–2000 nm) in Si/SiO2 substrates with a TiN barrier layer at the bottom of the holes are studied. Morphological studies of the metal in the holes show that the structure of copper clusters is rather uniform and is formed from crystallites of ~30 to 50 nm. Repeatability and stability with a homogeneous structure and with holes filled 100% by Cu determine the prospect of using the Si/SiO2/Cu system as a basic element for creating three-dimensional micro- and nanostructures, as well as for the 3D assembly of IC crystals.
TI - Metallization of Vias in Silicon Wafers to Produce Three-Dimensional Microstructures
JF - Russian Microelectronics
DO - 10.1134/S1063739721010108
DA - 2021-02-19
UR - https://www.deepdyve.com/lp/springer-journals/metallization-of-vias-in-silicon-wafers-to-produce-three-dimensional-iL8PqVQ5dE
SP - 8
EP - 18
VL - 50
IS - 1
DP - DeepDyve
ER -