TY - JOUR
AU - Ech-chamikh, E.
AB - Amorphous boron carbonitride (a-BCN) thin films were deposited by reactive radiofrequency (RF) sputtering onto silicon and glass substrates, from a boron carbide target in an atmosphere composed of a mixture of argon and nitrogen. The a-BCN films were highly transparent (almost 85%) in the visible and near-infrared regions. The optical band gap and the refractive index in the near-infrared region of the a-BCN films were found to be, respectively, in the range of 3.6 and 1.68 eV. The electrical characterization of the a-BCN films for application as an intermetal dielectric was investigated by measuring the current–voltage characteristic in Al/a-BCN/n-Si/Al structure. The electrical resistivity at room temperature, determined in the low voltage region where the Ohmic conduction mechanism is dominant, is around 2 × 1010 Ω cm. The electrical conduction results, in the high-applied fields, were interpreted in terms of a Schottky mechanism. The dielectric constant is about 2.83 and is consistent with the optical results.
TI - Optical and electrical characteristics of amorphous boron carbonitride thin films deposited by radiofrequency sputtering
JF - Journal of Materials Science
DO - 10.1007/s10853-011-5541-5
DA - 2011-04-14
UR - https://www.deepdyve.com/lp/springer-journals/optical-and-electrical-characteristics-of-amorphous-boron-carbonitride-hdr80nDeNQ
SP - 5847
EP - 5850
VL - 46
IS - 17
DP - DeepDyve
ER -