TY - JOUR
AU - Sun, Shin-Wei
AB - A new shallow trench isolation (STI) process with a mini-spacer at the  masking nitride sidewall before silicon trench etching was proposed. With  this mini-spacer, thicker corner liner oxide and a T-shaped trench oxide  can be formed simultaneously. The issue of oxide-recess at STI corner  can be effectively reduced and larger process window for subthreshold  kink free device were obtained. The isolation capability and junction  integrity were both improved as compared with those of the conventional  STI process. Reverse narrow width effect as well as gate oxide integrity  were also improved. This technology was employed for 0.13 µm complementary metal oxide silicon (CMOS)  device fabrication. 
TI - A Novel Shallow Trench Isolation with Mini-Spacer Technology
JF - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.38.2300
DA - 1999-04-01
UR - https://www.deepdyve.com/lp/iop-publishing/a-novel-shallow-trench-isolation-with-mini-spacer-technology-hY8vXYenrn
SP - 2300
VL - 38
IS - 4S
DP - DeepDyve
ER -