TY - JOUR
AU1 - Zhou, Feng
AU2 - Liang, Huizhen
AU3 - Liu, Tingchang
AU4 - Liu, Ting
AU5 - Luo, Wancheng
AU6 - He, Zhihao
AU7 - Zhang, Qijian
AB - Visibly transparent electron devices are current research highlights, which are found at the “neotype” stage of technical development for the usage in the next generation “see‐through” electronic devices. However, less attention is paid to transparent semiconductor memory devices, and hence, achieving such “see‐through” electronic devices are still partially limited by lacking the easily achievable and cost‐effective transparent memory materials. Herein, three visible light transparent polysulfate‐based memory devices are reported, e.g. ITO/P‐BPS/Al, ITO/P‐TPA/Al, and ITO/P‐TPABPS/Al, that displayed DRAM, WORM, and FLASH effects, respectively. The mechanisms of the observed memory behavior of each memory material are proposed on the basis of computational simulation. Remarkably, these polysulfates‐based memory materials are obtained by simply using different main‐chain repeating units, suggesting a wide application potential of polysulfate as functionalized materials.
TI - SuFEx‐based Transparent Polysulfates and their Applications in Tunable Resistant Electrical Memory Materials
JF - Advanced Functional Materials
DO - 10.1002/adfm.202417606
DA - 2025-03-01
UR - https://www.deepdyve.com/lp/wiley/sufex-based-transparent-polysulfates-and-their-applications-in-tunable-fcTol5lBdl
VL - 35
IS - 12
DP - DeepDyve
ER -