TY - JOUR
AU - Kutter, C.
AB - Abstract:In this article, we present a technology development of a superconducting qubit device 3D-integrated by flip-chip-bonding and processed following CMOS fabrication standards and contamination rules on 200 mm wafers. We present the utilized proof-of-concept chip designs for qubit- and carrier chip, as well as the respective front-end and back-end fabrication techniques. In characterization of the newly developed microbump technology based on metallized KOH-etched Si-islands, we observe a superconducting transition of the used metal stacks and radio frequency (RF) signal transfer through the bump connection with negligible attenuation. In time-domain spectroscopy of the qubits we find high yield qubit excitation with energy relaxation times of up to 15 us.
TI - 3D-Integrated Superconducting qubits: CMOS-Compatible, Wafer-Scale Processing for Flip-Chip Architectures
JF - Quantum Physics
DO - 10.48550/arxiv.2505.04337
DA - 2025-05-23
UR - https://www.deepdyve.com/lp/arxiv-cornell-university/3d-integrated-superconducting-qubits-cmos-compatible-wafer-scale-fTdDtG3qi8
VL - 2025
IS - 2505
DP - DeepDyve
ER -