TY - JOUR
AU - Tsukamoto, Naoyuki
AB - As a component protecting low-voltage (1–3 V) circuits against disturbance pulses such as electro-static discharge, we propose the application of the forward characteristics of wide bandgap semiconductor Schottky barrier diodes (SBDs). This concept was verified with β-Ga2O3-SBDs, which successfully kept the line voltage to 2.2–4.2 V for an input pulse voltage of 5–70 V with a rise time of less than 1 ns. This indicates that it is applicable for protection against nanosecond-level disturbance pulses.
TI - Electrostatic discharge protection of low-voltage circuits by forward characteristics of wide bandgap semiconductor Schottky barrier diodes
JF - Japanese Journal of Applied Physics
DO - 10.35848/1347-4065/ad92eb
DA - 2024-12-02
UR - https://www.deepdyve.com/lp/iop-publishing/electrostatic-discharge-protection-of-low-voltage-circuits-by-forward-fKB5HzBj8S
VL - 63
IS - 12
DP - DeepDyve
ER -