TY - JOUR
AU - 
AB - Vol. 114 (2008) ACTA PHYSICA POLONICA A No. 5 Proc. XXXVII International School of Semiconducting Compounds, Jaszowiec 2008 F. Balestra Sinano Institute, IMEP (CNRS-INPG-UJF), Grenoble INP-Minatec 3 Parvis Louis N¶eel, BP 257, 38016 Grenoble cedex 1, France A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice ar- chitectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The °exibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical prop- erties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The perfor- mance and physical mechanisms are addressed in single- and multi-gate thin ¯lm Si, SiGe and Ge metal-oxide-semiconductor ¯eld-e®ect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or 
TI - New Semiconductor Devices
JF - Acta Physica Polonica A
DO - 10.12693/aphyspola.114.945
DA - 2008-11-01
UR - https://www.deepdyve.com/lp/unpaywall/new-semiconductor-devices-f0kBj2wyDp
DP - DeepDyve
ER -