TY - JOUR
AU - Valdrè, U.
AB - A high voltage electron microscope, equipped with scanning transmission (STEM) attachment, electron beam induced conductivity (EBIC) facilities, and electron energy loss spectrometer (ELS), has been used to investigate semiconductor devices. The capability of STEM to produce, simultaneously or sequentially, conductive and transmission images of the same specimen region, which can also be ELS analysed, is exploited in order to establish direct and unambiguous correlations between EBIC and STEM images of defective regions (dislocations and microplasma sites) in silicon devices.
TI - Observation of dislocations and microplasma sites in semiconductors by direct correlations of STEBIC, STEM and ELS
JF - Journal of Microscopy
DO - 10.1111/j.1365-2818.1980.tb00273.x
DA - 1980-03-01
UR - https://www.deepdyve.com/lp/wiley/observation-of-dislocations-and-microplasma-sites-in-semiconductors-by-ex35YoXPsW
SP - 263
EP - 273
VL - 118
IS - 3
DP - DeepDyve
ER -