TY - JOUR
AU - Chen, Xingbi
AB - An LDMOS with nearly rectangular-shape safe operation area (SOA) and low specific on-resistance is proposed. By utilizing a split gate, an electron accumulation layer is formed near the surface of the n-drift region to improve current conduction capability during on-state operation. As a result, the specific on-resistance can be lowered down to 74.7 mΩ·cm2 for a 600 V device from simulation. Furthermore, under high-voltage and high-current conditions, electrons and holes flow as majority carriers in the n-drift region and p-type split gate, respectively. Due to charge compensation occurring between holes and electrons, the local electric field is reduced and impact ionization is weakened in the proposed device. Therefore, a higher on-state breakdown voltage at large VGS is obtained and snap-back is suppressed as well.
TI - An LDMOS with large SOA and low specific on-resistanceProject supported in part by the National Natural Science Foundation of China (No. 51237001).
JO - Journal of Semiconductors
DO - 10.1088/1674-4926/37/5/054006
DA - 2016-05-01
UR - https://www.deepdyve.com/lp/iop-publishing/an-ldmos-with-large-soa-and-low-specific-on-resistanceproject-dR6Lut2oxI
SP - 054006
VL - 37
IS - 5
DP - DeepDyve
ER -