TY - JOUR
AU - Reddy, N. Kishan
AB - JOURNAL OF MATERIALS SCIENCE LETTERS 9 (1990) 1393-1394 N. KISHAN REDDY Indian Institute of Chemical Technology,, Hyderabad 500 007, India Silicon nitride-silicon carbide (Si 3 N4-SiC) composites have attracted considerable attention because of their high strength at high temperature, excellent thermal shock resistance and good oxidation resistance. These composites were prepared via different routes [1-3]. The modulus of rupture and fracture toughness of the composites have been discussed by Buljan et al. [4] and Akimune et al. [5]. Mukerji and Reddy [6] have reported the oxidation and corrosion resistance of the composites. The electrical behaviour of silicon nitride and silicon carbide has been studied by other inves- tigators. [7-9]. It was found there that the electrical resistivity of silicon carbide varies from 10 -2 to 10 3 ~')-cm and that of silicon nitride is 109 f~-cm. In this Figure 1 Optical micrograph of Si 3 N 4-SIC composite. investigation the variation of electrical resistivity with temperature for Sis N4-SiC composites having 8, 15 and 25wt % Si3N 4 bond was studied and the results forms a matrix surrounding the silicon carbide grains. are presented. High-purity silicon carbide and silicon were used The XRD patterns of Si 3N4-SiC composites with 
TI - Electrical behaviour of silicon nitride-silicon carbide composites
JF - Journal of Materials Science Letters
DO - 10.1007/BF00721593
DA - 1990-12-01
UR - https://www.deepdyve.com/lp/springer-journals/electrical-behaviour-of-silicon-nitride-silicon-carbide-composites-dQD7SqJ34c
SP - 1393
EP - 1394
VL - 9
IS - 12
DP - DeepDyve
ER -