TY - JOUR
AU - Tan, C.
AB - Hermetic seal and mechanical support of wafer-level Cu-to-Cu thermo-compression bonding with different bonding temperature are analyzed in this work. The investigation consists of two parts: hermetic seal study using helium bomb test and mechanical support study using four-point bending method. The wafer pairs are bonded at 250, 300 and 350 °C, respectively, under a bonding force of 5,500 N for a duration of 1 h in vacuum (~2.5 × 10−4 mbar). The bonding medium consists of Cu (300 nm) bonding layer and Ti (50 nm) barrier layer. Excellent helium leak rate, which is smaller than the reject limit defined by MIL-STD-883E standard (method 1014.10), and outstanding interfacial adhesion energy are detected for all samples. The cavities sealed at 300 °C present an excellent reliability of temperature cycling test up to 500 cycles. Cu-to-Cu thermo-compression bonding at low temperature (≤300 °C) presents an attractive hermetic seal and a robust mechanical support for 3D integration application.
TI - Effect of bonding temperature on hermetic seal and mechanical support of wafer-level Cu-to-Cu thermo-compression bonding for 3D integration
JF - Microsystem Technologies
DO - 10.1007/s00542-012-1689-4
DA - 2012-10-30
UR - https://www.deepdyve.com/lp/springer-journals/effect-of-bonding-temperature-on-hermetic-seal-and-mechanical-support-d9bA2UY9D0
SP - 661
EP - 667
VL - 19
IS - 5
DP - DeepDyve
ER -