TY - JOUR
AU - Perçin, Gökhan
AB - As the semiconductor industry is moving to very low-k1 patterning solutions, the metrology problems facing process engineers are becoming much more complex. Choosing the right optical critical dimension (OCD) metrology technique is essential for bridging the metrology gap and achieving the required manufacturing volume throughput. The critical dimension scanning electron microscope (CD-SEM) measurement is usually distorted by the high aspect ratio of the photoresist and hard mask layers. CD-SEM measurements cease to correlate with complex three-dimensional profiles, such as the cases for double patterning and FinFETs, thus necessitating sophisticated, accurate and fast computational methods to bridge the gap. In this work, a suite of computational methods that complement advanced OCD equipment, and enabling them to operate at higher accuracies, are developed. In this article, a novel method for accurately modeling OCD profiles is presented. A finite element formulation in primal form is used to discretize the equations. The implementation uses specialized finite element spaces to solve Maxwell equations in two dimensions.
TI - Accurate optical CD profiler based on specialized finite element method
JF - Proceedings of SPIE
DO - 10.1117/12.918055
DA - 2012-02-13
UR - https://www.deepdyve.com/lp/spie/accurate-optical-cd-profiler-based-on-specialized-finite-element-d5aWKmgGmA
SP - 83240P
EP - 83240P-7
VL - 8324
IS - 1
DP - DeepDyve
ER -