TY - JOUR
AU - Briso‐Rodriguez, Cesar
AB - This article presents a wide band compact high isolation photoconductive switch, which is based on the series‐shunt switch design with three photoconductive switches made of diced high‐resistivity silicon wafer placed over a microstrip gap and activated by 808‐nm near‐infrared laser diodes. The switch shows an insertion loss of 1.2 dB and an isolation of 44.8 dB at 2 GHz. It is easy to operate and control by light, high‐speed, electromagnetically transparent and it does not require any biasing circuits. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1168–1170, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27507
TI - High isolation series‐shunt photoconductive microwave switch
JF - Microwave and Optical Technology Letters
DO - 10.1002/mop.27507
DA - 2013-05-01
UR - https://www.deepdyve.com/lp/wiley/high-isolation-series-shunt-photoconductive-microwave-switch-d0xERTtUJi
SP - 1168
EP - 1170
VL - 55
IS - 5
DP - DeepDyve
ER -