TY - JOUR
AU - Tataroğlu, Adem
AB - In this study, an Au/SnO2/p-InP metal oxide semiconductor (MOS) device was prepared, and its electrical and dielectric properties were analyzed using admittance measurements (Y = G + iωC) with an impedance analyzer. Capacitance (C) and conductance (G) were measured across frequencies (1 kHz to 1 MHz) at 300 K. It was observed that C and G values varied with frequency, attributed to the presence of interface traps/states. The interface state density (Nss) was evaluated using the low-high frequency (CLF–CHF) capacitance technique. The series resistance (Rs) of the MOS capacitor was determined by the conductance method. Additionally, the variation of dielectric properties, including complex dielectric permittivity (ε* = ε′ − iε′), loss tangent (tanδ), and ac conductivity (σac), with frequency was analyzed through impedance measurements. Moreover, ac conductivity was also studied using Jonscher’s universal power law. The results suggest that the fabricated capacitor is suitable for use as a MOS device in electronic circuits.
TI - Admittance Measurements of Au/SnO2/p-InP (MOS) Device
JF - ECS Journal of Solid State Science and Technology
DO - 10.1149/2162-8777/adc3c7
DA - 2025-03-01
UR - https://www.deepdyve.com/lp/iop-publishing/admittance-measurements-of-au-sno2-p-inp-mos-device-cVm9tjMIUk
VL - 14
IS - 3
DP - DeepDyve
ER -