TY - JOUR
AU - Miyake, Akihiro
AB - Techniques of fabricating altPSMs of single trench structure by quartz etching have been developed. A two-step etching process was adopted to make the side-etching structure. Shifter areas were etched by dry-method in first step and by wet-method in second step. In the experiments, by a RIE type dry-etching machine, a hydrofluoric (HF) acid etching system, a phase measurement system and 6025-mask plate were used. We optimized dry-etching parameter, such as pressure, RF power and composition of gas mixture ratio. The smallest phase difference between the device-pattern and the monitor- pattern was obtained in smallest phase difference between the device-pattern and the monitor-pattern was obtained in low pressure wit inactive gas. The dry etching uniformity was improved and range value was reduced from 2.7 degrees to 1.1 degrees by using type B of the plate holder. In wet etching process, two modes of movement and two concentration of buffered HF acid were compared from the viewpoint of etching uniformity. The uniformity was reduced to two third of the benchmark condition. For AltPSMs production quality, phase mean deviation is within +/- 2 degrees and uniformities are within 2.5 degrees. The technique described in this study can be applied to 150 nm node altPSMs fabrication and shows an extensibility to 130 nm node.
TI - Practical phase control technique for alternating phase-shift mask fabrication
JF - Proceedings of SPIE
DO - 10.1117/12.392040
DA - 2000-07-19
UR - https://www.deepdyve.com/lp/spie/practical-phase-control-technique-for-alternating-phase-shift-mask-bl0MD6E8DT
SP - 394
EP - 400
VL - 4066
IS - 1
DP - DeepDyve
ER -