TY - JOUR
AU1 - Jouini, Anis
AU2 - Ponthenier, Damien
AU3 - Lignier, Hélène
AU4 - Enjalbert, Nicolas
AU5 - Marie, Benoit
AU6 - Drevet, Béatrice
AU7 - Pihan, Etienne
AU8 - Cayron, Cyril
AU9 - Lafford, Tamzin
AU1 - Camel, Denis
AB - ABSTRACT Work on silicon crystal quality improvement and defect control has been carried out on lab‐scale seeded growth ingots allowing wafers with controlled grain orientations. Both <111> and <100> monocrystalline‐like ingots were produced using a combination of quartz rod dipping and a modulated conductive heat extraction system, made in‐house, in a directional solidification system. Two mono‐like wafer morphology types have been produced. Their structural and electrical properties are presented in detail. Copyright © 2011 John Wiley & Sons, Ltd.
TI - Improved multicrystalline silicon ingot crystal quality through seed growth for high efficiency solar cells
JF - Progress in Photovoltaics: Research & Applications
DO - 10.1002/pip.1221
DA - 2012-09-01
UR - https://www.deepdyve.com/lp/wiley/improved-multicrystalline-silicon-ingot-crystal-quality-through-seed-bkSNoeP2ZK
SP - 735
EP - 746
VL - 20
IS - 6
DP - DeepDyve
ER -