TY - JOUR
AU1 - Fan, Dongxu
AU2 - Li, Weisheng
AU3 - Qiu, Hao
AU4 - Xu, Yifei
AU5 - Gao, Si
AU6 - Liu, Lei
AU7 - Li, Taotao
AU8 - Huang, Futao
AU9 - Mao, Yun
AU1 - Zhou, Wenbin
AU1 - Meng, Wanqing
AU1 - Liu, Mengxin
AU1 - Tu, Xuecou
AU1 - Wang, Peng
AU1 - Yu, Zhihao
AU1 - Shi, Yi
AU1 - Wang, Xinran
AB - Two-dimensional transition metal dichalcogenides could potentially be used to create transistors that are scaled beyond the capabilities of silicon devices. However, despite progress on the single-transistor level, the development of high-frequency integrated circuits remains a challenge and the operating frequency of integrated circuits based on transition metal dichalcogenides has so far been limited to the megahertz regime; this is well below the silicon complementary metal–oxide–semiconductor technology, as well as emerging technologies such as carbon nanotubes. Here we report two-dimensional semiconductor integrated circuits—five-stage ring oscillators—that operate in the gigahertz regime (up to 2.65 GHz) and are developed using a design-technology co-optimization process. The circuits are based on monolayer molybdenum disulfide field-effect transistors that have an air-gap structure, which leads to doping-free ohmic contacts and low parasitic capacitance. Technology computer-aided design simulations also suggest that our air-gap structure can potentially be scaled to the 1 nm technology node and could reach the targets set out in the IEEE International Roadmap for Devices and Systems for 2031.
TI - Two-dimensional semiconductor integrated circuits operating at gigahertz frequencies
JF - Nature Electronics
DO - 10.1038/s41928-023-01052-5
DA - 2023-11-01
UR - https://www.deepdyve.com/lp/springer-journals/two-dimensional-semiconductor-integrated-circuits-operating-at-baX0ZQvsPl
SP - 879
EP - 887
VL - 6
IS - 11
DP - DeepDyve
ER -