TY - JOUR
AU - Tashima, M. M.
AB - The material requirements for near infrared detectors are discussed, and four different LPE growth techniques used to grow InGaAsP epitaxial layers lattice matched to (100)-InP substrates are described. The methods required for the growth of constant composition high purity LPE material are reviewed, and the problems of grading at heterojunction interfaces are discussed. VPE growth techniques are described which are currently under development to avoid some of these problems.
TI - Compound Semiconductor Materials For Near-Infrared Photodetectors
JF - Proceedings of SPIE
DO - 10.1117/12.965793
DA - 1981-06-11
UR - https://www.deepdyve.com/lp/spie/compound-semiconductor-materials-for-near-infrared-photodetectors-ap0SUaW0Ze
SP - 66
EP - 73
VL - 285
IS - 
DP - DeepDyve
ER -