TY - JOUR
AU - Yang, Hui
AB - Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.
TI - Thermal analysis of GaN laser diodes in a package structure
JF - Chinese Physics B
DO - 10.1088/1674-1056/21/8/084209
DA - 2012-08-01
UR - https://www.deepdyve.com/lp/iop-publishing/thermal-analysis-of-gan-laser-diodes-in-a-package-structure-aWxrXYdvis
SP - 084209
VL - 21
IS - 8
DP - DeepDyve
ER -