TY - JOUR
AU1 - Kwon, Man Gu
AU2 - Kim, Jae Ho
AU3 - Kim, Tae Whan
AU4 - Kwack, Kae Dal
AB - Unique multilevel cell (MLC) flash memory devices utilizing novel asymmetric gates were proposed to enhance a writing time. Different coupling ratios and maximum storage charges of the MLC flash memories with the asymmetric floating gates decreased the number of step pulses for the storage of the multi-bits in each memory cell. These results indicate that the writing time of the MLC flash memories can be improved by using the asymmetric floating gate structure consisting of the different coupling ratio and the maximum storage charge in the floating gates. 
TI - Unique Multilevel Flash Memory Devices Operating at High Programming Speed, Designed Utilizing Novel Asymmetric Gates
JF - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.44.L723
DA - 2005-05-01
UR - https://www.deepdyve.com/lp/iop-publishing/unique-multilevel-flash-memory-devices-operating-at-high-programming-aEghyd0rA2
SP - L723
VL - 44
IS - 5L
DP - DeepDyve
ER -